Date: 16 June
Hour: 8.50 a.m. to 1.05 p.m.
Venue: Room LT2, North Tower, Técnico – Alameda campus
More information: Official Site

«In celebration of the 100th Anniversary of the Transistor, the Instituto de Telecomunicações is organising a prestigious IEEE Electron Devices Society (EDS) Mini-Colloquium (MQ), in partnership with the IEEE Electron Devices Society and the AP-MTT-EDS Portugal Joint Chapter, on 16 June 2025, from 8.50 a.m. to 1.05 p.m., at Instituto Superior Técnico, North Tower, 4th Floor, Room LT2.

Held one day after the Mid-Year EDS Governance Meeting, a biennial event traditionally hosted in Europe, this MQ serves as an educational forum to bring together leading voices in microelectronics. The colloquium welcomes EDS members from academia, industry, and a large student audience.

The MQ will highlight state-of-the-art advances across a wide spectrum of semiconductor technologies, from thin-film transistors and organic photovoltaics to GaN HEMTs, high-K CMOS, and Germanium quantum-dot devices.

The Mini-Colloquium marks a significant milestone in microelectronics history and provides a rare opportunity for attendees to engage with global pioneers shaping the next century of electronic device innovation.»

Featured Talks Include:

• 8.50 a.m.– 9 a.m. – Opening
• 9 a.m. – 9. 30 a.m.– Fernando Guarín, IEEE Division 1 Director:
  “100th Anniversary of the Transistor and an Overview of the Semiconductor Industry Today”
• 9.30 a.m. – 10 a.m. – Luís F. Marsal, University Rovira i Virgili (Spain):
  “Next-Generation Organic Photovoltaics: Materials, Stability, and Device Engineering”
• 10 a.m. – 10:30 a.m. – Andy Kerber, Intel Corporation (USA):
  “Reliability of Scaled Metal Gate / High-K CMOS Devices”
• 10.30 a.m. – 11 a.m. – Hiroshi Iwai, Tokyo Institute of Technology (Japan):
  “Past, Present, and Future of Integrated Circuits Technologies and Their Development”
• 11 a.m. – 11.30 a.m. – Coffee Break
• 11.30 a.m. – 12 p.m.– Benjamin Iñiguez, University Rovira i Virgili (Spain):
  “History and Evolution of Thin Film Transistors”
• 12 p.m. – 12.30 p.m.– Yogesh S. Chauhan, IIT Kanpur (India): “Compact Modeling of GaN HEMTs for RF Circuit Design”
• 12.30 p.m. – 1 p.m. – Pei Wen Li, National Yang-Ming Chiao Tung University (Taiwan):
  “Germanium Quantum-Dot Technology for Advanced Computing”
• 1 p.m. – 1.05 p.m. – Closing Remarks

No registration is required, and a complimentary closing lunch will be offered.